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DRIVE TRANSFORMERS FOR IGBT - INSULATION VOLTAGE UP TO 380 Vrms

In recent years, power electronics have had a decisive influence on the technology of electrical energy generation, distribution and conversion. Modern semiconductors enable electrical energy to be controlled and converted rapidly and safely with low losses. Key contributors to progress in this field are turn-off power semiconductors like IGBTs (insulated gate bipolar transistors), MOSFETs (metaloxide semiconductor field-effect transistor) and GTOs (gate turn-off thyristors). VAC products are significant contributors in maintaining efficiency and safety in semiconductor switching and low-loss power transmission.

Higher switching frequencies, higher blocking voltages and switching power influence the way a semiconductor is activated and controlled to allow for safe and simple switching. Drive transformers ensure galvanic separation while also supplying the switching signal and /or the energy for the semiconductor drive circuit.

Transformers must meet a number of requirements

• High insulation strength

• Low coupling capacitance forhigh interference resistance

• Compact design

• Low leakage inductance for high impulse precision

• Transmission of switching power

• Wide range of operating temperature (e.g. -40 °C to +105 °C)

• National and international standards, e.g. EN 50178, IEC 61800, UL508, IEC 62109, UL1741

Transformer properties:

• Up to 1200 V DC for SMD; up to 8.5 kVrms for PTH

• Low number of turns 

• SMD solutions available

• Lower number of turns; high permeability

• Typically 2 to 20 watts

• Low and linear variation of permeability with temperature

• Designs according to relevant standards, properties verified by inspections and type testing


 

Additional general information on drive transformers can be found in our product brochure.

There is a checklist available, in which you please add all required data of your application Checklist Drive Transformers 2011

VAC-Product 

Model 

n

∫udt 

LP 

LS 

Ck 

UP 

Uis 

Dimensions

 

 

 

 

 

 

 

 

 

w

h

 

 

 

µVs 

mH 

µH 

pF 

kVrms 

kVrms 

mm 

mm 

mm 

T60403-D4097-X055

PTH

1 : 1 : 1

200

6.5

0.3

33

3.1

0.38

14.8

16.6

13. 5

T60403-D4097-X058

PTH

1 : 1 : 1

260

11

0.35

38

3.1

0.38

14.8

16.6

13.5

T60403-D4099-X005

PTH

1 : 1 : 1

150

2.7

0.3

25

3.1

0.38

16.6

14.8

13.5

T60403-D4099-X006

PTH

1 : 1 : 1 : 1

125

2.4

0.25

28

3.1

0.38

16.6

14. 8

13.5

T60403-A4025-X060

PTH

1 : 1.2 : 1.2

15

0.3

0.4

15

3.1

0.38

14

9

15

T60403-D4097-X059

PTH

1 : 1 : 1

50

0.6

0.25

27

3.1

0.38

14.8

16.6

13.5

T60403-D4097-X063

PTH

1 : 1 : 1 

260

10

0.5

8

3.1

0.38

14.8

16.6

13,5

T60403-D4721-X012

PTH

1 : 1 

250

1.4

4

100

2.5

0.22

17

17. 8

13.5

T60403-F4025-X142

PTH

1 : 1 : 1 

130

0.8

0.48

91

2,5

0.38

13. 2

16.6

10

T60403-Y5046-X011

SMD

2 : 1 / 1 : 2

45

4.6

1.1

25

3

0.3

17

15

10.5

Notes

∫Udt = Minimum voltage time area at the primary winding in unipolar operation
n = Turns ratio
L= Primary inductance (typical value)
Ls = Leakage inductance of primary winding N with secondary winding shorted (typical value)
Ck = Coupling capacitance between primary and secondary windings (typical value)
Uis = Insulation voltage (operating voltage), effective value between primary and secondary windings
Up = Test voltage, rms value at 50 Hz between primary and secondary windings
PTH = Pin through hole
SMD = Surface mounted device

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Last update: 13.01.2016