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DRIVE TRANSFORMERS FOR IGBT - INSULATION VOLTAGE 600 Vrms TO 2000 Vrms

In recent years, power electronics have had a decisive influence on the technology of electrical energy generation, distribution and conversion. Modern semiconductors enable electrical energy to be controlled and converted rapidly and safely with low losses. Key contributors to progress in this field are turn-off power semiconductors like IGBTs (insulated gate bipolar transistors), MOSFETs (metaloxide semiconductor field-effect transistor) and GTOs (gate turn-off thyristors). VAC products are significant contributors in maintaining efficiency and safety in semiconductor switching and low-loss power transmission.

Higher switching frequencies, higher blocking voltages and switching power influence the way a semiconductor is activated and controlled to allow for safe and simple switching. Drive transformers ensure galvanic separation while also supplying the switching signal and /or the energy for the semiconductor drive circuit.

Transformers must meet a number of requirements:

• High insulation strength

• Low coupling capacitance forhigh interference resistance

• Compact design

• Low leakage inductance for high impulse precision

• Transmission of switching power

• Wide range of operating temperature (e.g. -40 °C to +105 °C)

• National and international standards, e.g. EN 50178, IEC 61800, UL508, IEC 62109, UL1741

Transformer properties:

• Up to 1200 V DC for SMD; up to 8.5 kVrms for PTH

• Low number of turns 

• SMD solutions available

• Lower number of turns; high permeability

• Typically 2 to 20 watts

• Low and linear variation of permeability with temperature

• Designs according to relevant standards, properties verified by inspections and type testing


Additional general information on drive transformers can be found in our product brochure.

There is a checklist available, in which you please add all required data of your application Checklist Drive Transformers 2011.

VAC-Product 

Model 

∫udt 

LP 

LS 

Ck 

UP 

Uis 

Dimensions 

 

 

 

 

 

 

 

 

 

l

w

h

 

 

 

µVs 

mH 

µH 

pF 

kVrms 

kVrms 

mm 

mm 

mm 

T60403-F4097-X070

PTH

1.5 : 1

150

1.215

10

25

3.1

0.9

14.8

16.6

13.5

T60403-F4185-X040

PTH

1 : 1 : 1

520

5.5

2

100

5

0.6

27.5

27.6

20

T60403-D4615-X047

PTH

1 : 1 : 1

250

3

0.25

25

5

1.6

23

23

16.5

T60403-D4721-X004

PTH

1 : 1 : 1

250

0.85

28

6

3.6

0.75

17

17.8

13.5

T60403-F4215-X178*

PTH

1 : 1 : 1

170

2.2

0.47

19

5.25

1.2

21

21

13.5

T60403-F4099-X009*

PTH

1 : 1 : 1/1

150

2.5

5

15

3

0.63

16.6

14.8

13.5

T60403-F4099-X010*

PTH

1 : 1 : 1 : 1

130

0.84

5

10

4.6

0.85

16.6

14.8

13.5

T60403-F4099-X011*

PTH

1 : 1 : 1

85

0.95

2.4

2.5

4.5

0.85

16.6

14.8

13.5

T60403-D4097-X051

PTH

1 : 1

100

1.7

0.3

20

3.1

0.7

14.8

16.6

13.5

T60403-F4097-X062

PTH

1 : 1.65/1.65

16

0.06

0.6

6

6

1

14.8

16.6

13.5

T60403-F4185-X016

PTH

3.1 : 1 : 1

800

8.5

70

11

4

1

27.5

27.6

20

T60403-D4215-X030

PTH

1 : 1  : 1

500

5

0.8

63

3.5

0.6

21

21

13.5

T60403-D4615-X053

PTH

1 : 1 : 1 

250

1.7

1

35

5

0.6

22.5

22.5

16.5

T60403-D4615-X054

PTH

1 : 1.2 : 1.2

250

1.7

1

35

5

0.6

22.5

22.5

16.5

T60403-D4721-X063

PTH

2.3 : 1

200

4.5

50

7

3.1

1

17

17.8

13.5

T60403-D4802-X087

PTH

4 : 1

2500

3

18

58

16

8.35

61

74

90

T60403-F5046-X007

SMD

1 : 1 : 1

85

1.4

0.3

13

4.5

0.85

17

15

10.5

T60403-F5046-X008*

SMD

1 : 1 : 1 : 1

110

2.32

6.7

9

4.6

0.85

17

15

10.5

T60403-F4215-X180*

PTH

1 : 1 : 1

170

2.98

0.5

20

6.75

0.6

20

20

14.5

T60403-D4615-X067*

PTH

1 : 1 : 1

500

14.4

1.0

50

6.75

0.6

23

23

16.5

T60402-C4615-X065*

PTH

2.9 : 1 : 1

340

14.4

9

10

2.2

1.2

22.5

22.5

20

T60402-C4615-X070*

PTH

1 : 1: 1.11 : 1.11

100

0.7

13

10

5

0.9

22.5

22.5

16.3

T60403-F4185-X046*

PTH

2 : 1 

500

22

4

40

5

1.2

27.5

27.6

20

* NEW

Notes

∫Udt = Minimum voltage time area at the primary winding in unipolar operation
n = Turns ratio
L= Primary inductance (typical value)
Ls = Leakage inductance of primary winding N with secondary winding shorted (typical value)
Ck = Coupling capacitance between primary and secondary windings (typical value)
Uis = Insulation voltage (operating voltage), effective value between primary and secondary windings
Up = Test voltage, rms value at 50 Hz between primary and secondary windings
PTH = Pin through hole
SMD = Surface mounted device

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Last update: 04.09.2018